by Navitas | Feb 6, 2023 | Front Page, In the Media, Latest News, Short post
“Gallium nitride (GaN) and silicon carbide (SiC) semiconductors are now in mass production and rapidly gaining market share. According to market research firm Yole, by the end of 2027, GaN and SiC devices will capture 30% of the power semiconductors market,...
by Navitas | Feb 6, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Torrance, CA – February 6th, 2023— Navitas Semiconductor (Nasdaq: NVTS) today announced that it will report fourth quarter and full year 2022 financial results after the market close on Thursday, February 23, 2023. Management will host a conference call and live...
by Navitas | Feb 1, 2023 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Navitas to showcase how next-gen GaN and SiC power semis address a diverse $22B/yr market, with an exciting, informative in-person experience Torrance, CA – February 1st, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Jan 31, 2023 | Awards, Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Proprietary GaN-IC technology integrates two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation to create a fundamental power-stage building block for power electronics Torrance, CA – January 31st, 2023 – Navitas...
by Navitas | Jan 30, 2023 | Uncategorised
SiC MOSFETs offer superior conductivity and switching performance compared to silicon due to their ‘wide bandgap characteristics and high electric-field strength. However, traditional designs using legacy planar or trench techniques must compromise between...
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