by Navitas | Oct 21, 2022 | Short post
GaNSense Half-bridge ICs integrated over current protection (OCP) provides cycle-by-cycle over-current detection and protection circuitry to protect the low-side GaN power FET against high current levels Find out more in our whitepaper and Application Note AN018:...
by Navitas | Oct 18, 2022 | Consumer PR, Front Page, IR, IR Financial, Latest News, Press Releases
Industry-leading, high-speed GaNFast™ and GeneSiC™ technologies drive a $22B/year market opportunity at the world’s leading electronics trade fair El Segundo, CA – October 18th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Oct 12, 2022 | Short post
GaNSense Half-bridge ICs integrated current sense (VCS) feature shows excellent real-time matching and tracking performance versus inductor current (IL) at 1 A peak current levels for 120 W in an asymmetrical half-bridge (AHB) application circuit during steady-state,...
by Navitas | Oct 12, 2022 | Data Center News, EV News, Front Page, In the Media, Latest News, Mobile News, Short post, Solar News
“GaN power device maker, Navitas, believes its latest half-bridge power IC will deliver the high powers and efficiencies that mobile phone chargers, electric vehicles, photovoltaics and data centres need”. “IN EARLY September this year, California-based GaN power...
by Navitas | Oct 7, 2022 | Front Page, IR, Latest News, Short post, Tech Feature
GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single-package solution reduces component...
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