by Navitas | Jan 2, 2020 | Awards, Front Page, In the Media, IR, Press Releases
GaNFast Power IC Technology Beats 100+ Challengers EL SEGUNDO, California— (PRWeb) – Navitas Semiconductor announced today that it was awarded the Shanghai Zhangjiang 895 and Zhangjiang Science City · ICV Pioneer Alliance “Innovation Star” Award on...
by Navitas | Dec 20, 2019 | In the Media
Maurizio Di Paolo Emilio at EE Times explains why GaNFast from Navitas is a game-changer when it comes to mobile charging speed. Read...
by Navitas | Dec 12, 2019 | Front Page, Press Releases
Over 1,000 CES attendees to receive free GaN chargers & charge their mobile devices 3x faster EL SEGUNDO, Calif.–(PRWeb)— Navitas Semiconductor announced today that it will give away $50,000 of leading-edge, Gallium Nitride (GaN) fast-chargers at the...
by Navitas | Dec 5, 2019 | Awards
DULLES, VA, December 5, 2019 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2019 R&D 100 Award for development of SiC-Based Monolithic Transistor-Rectifier Switch. GeneSiC Semiconductor Inc, a key...
by Navitas | Dec 5, 2019 | Front Page, Latest News, Press Releases
GaNFast Power ICs enable HyperJuice – world-wide, full USB-PD 100W performance. EL SEGUNDO, Calif.–(PRWeb)— Navitas Semiconductor today announced its partnership with HYPER by Sanho Corporation to introduce the HyperJuice 100W 4-port charger with GaNFast...
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