Data Center PR | Navitas

Navitas Partners with Great Wall Power for Next Generation 400V-DC Power Architecture for AI Data Centers

by Navitas | Apr 3, 2025 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases

GaNSense™ technology boosts 8x power for AI data centers, telecommunications, and industrial equipment in ultra-high power density DC-DC converters. TORRANCE, CA – April 3rd, 2025—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...

Navitas Enables Data Center Power Supplies to Achieve Latest 80 PLUS® Ruby Certification

by Navitas | Mar 17, 2025 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases

High-power GaNSafe™ & GeneSiC MOSFETs power new levels of energy efficiency, reduce electricity costs, and extend system lifetime. TORRANCE, CA – March 17th, 2025—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company...

Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center, EV, and Mobile Applications at APEC 2025

by Navitas | Feb 21, 2025 | AI PR, Data Center PR, EV PR, Front Page, IR, Latest News, Press Releases

Torrance, CA – February 21st, 2025—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will attend APEC 2025...

Navitas Showcases Breakthroughs in GaN and SiC Technologies for AI Data Centers, EVs, and Mobile Applications at CES 2025

by Navitas | Dec 5, 2024 | AI PR, Data Center PR, EV PR, Front Page, IR, Latest News, Press Releases

Torrance, CA – December 5th, 2024—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will showcase several...

Navitas Presents World’s First 8.5kW AI Data Center Power Supply Powered by GaN and SiC

by Navitas | Nov 5, 2024 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases

Next-generation solution achieves 98% efficiency with high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs for AI and hyperscale data centers. Torrance, CA – November 5th, 2024—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...

Navitas Showcases World’s First 8.5kW AI Data Center Power Supply Using GaN & SiC at China’s Premier Power Electronics Conference

by Navitas | Oct 31, 2024 | Data Center PR, Front Page, IR, Latest News, Press Releases

Latest GaNSafe™, Gen-3 Fast SiC MOSFETs, and GaNSlim™ power ICs deliver high-efficiency, high-power density performance for AI data centers, EV charging, & consumer solutions. Torrance, CA – October 31st, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the industry...

Navitas Partners with Great Wall Power for Next Generation 400V-DC Power Architecture for AI Data Centers

Navitas Enables Data Center Power Supplies to Achieve Latest 80 PLUS® Ruby Certification

Navitas to Unveil Breakthrough Advances in GaN and SiC for AI Data Center, EV, and Mobile Applications at APEC 2025

Navitas Showcases Breakthroughs in GaN and SiC Technologies for AI Data Centers, EVs, and Mobile Applications at CES 2025

Navitas Presents World’s First 8.5kW AI Data Center Power Supply Powered by GaN and SiC

Navitas Showcases World’s First 8.5kW AI Data Center Power Supply Using GaN & SiC at China’s Premier Power Electronics Conference

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