by Navitas | Jan 20, 2023 | CES23Feat, Front-Page, In the Media, Latest-News, Short post
Just a few years ago, people asked when GaN would happen. And now, when GaN is already here, it’s probably a bit late to join the GaN party. Navitas is one of the few GaN device specialists that are now part of this power electronics market disruption. The year 2023...
by Navitas | Jan 19, 2023 | Front-Page, IR, IR-Financial, Latest-News, Press-Releases
Strategic silicon control IC capability expected to accelerate next-generation GaN and SiC share gains vs. legacy silicon power devices across a broad range of markets Torrance, CA – January 19th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
by Navitas | Jan 9, 2023 | Front-Page, In the Media, IR, IR Financial, IR-Financial, Latest-News, Press-Releases
Leading-edge gallium nitride (GaN) and silicon carbide (SiC) technologies rapidly taking share from legacy silicon chips in $22B/yr market opportunity Torrance, CA – January 9th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Dec 28, 2022 | CES23Feat, Front-Page, IR, IR-Financial, Latest-News, Press-Releases
Leading consumer brands Anker, OnePlus, Spigen and Ugreen highlight the latest smartphone and laptop charging benchmarks enabled by next-generation GaN power ICs Torrance, CA – December 28th, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
by Navitas | Dec 6, 2022 | Consumer PR, Front-Page, IR, Latest-News, Press-Releases
Navitas to showcase how next-gen power semis address a diverse $22B/yr market, with an exciting, informative in-person experience. Torrance, CA – December 5th, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company...
by Navitas | Dec 2, 2022 | Consumer PR CN, Front Page, IR CN, Latest News, Press Releases CN
搭载下一代高速GaNFast™氮化镓功率芯片， 210W神仙秒充成功上市，手机快充进入9分钟时代 加利福尼亚州托伦斯，2022 年 11 月 1日讯： 唯一全面专注的下一代功率半导体公司及氮化镓功率芯片行业领导者—纳微半导体（纳斯达克股票代码：NVTS）正式宣布，近期小米旗下最新发布的Redmi Note 12 系列中， Redmi Note 12探索版标配的210W氮化镓超快充和Redmi Note 12 Pro+搭配的120W氮化镓超快充均已采用了搭载纳微全新GaNSense™技术的新一代GaNFast™氮化镓功率芯片。...
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