by Navitas | Dec 9, 2024 | Front Page, IR, IR Financial, Latest News, Press Releases
Torrance, Calif., Dec. 09, 2024 – Navitas Semiconductor (Nasdaq: NVTS) the only pure-play, next-generation, power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced...
by Navitas | Dec 5, 2024 | AI PR, Data Center PR, EV PR, Front Page, IR, Latest News, Press Releases
Torrance, CA – December 5th, 2024—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will showcase several...
by Navitas | Dec 3, 2024 | Front Page, Latest News, Press Releases
Torrance, Calif., Dec. 03, 2024 – Navitas Semiconductor (Nasdaq: NVTS) the only pure-play, next-generation, power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, today...
by Navitas | Nov 26, 2024 | Front Page, IR, IR Financial, Latest News, Press Releases
Torrance, CA – November 26th, 2024, Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced participation in the upcoming investor...
by Navitas | Nov 21, 2024 | Awards, Front Page, IR, IR Financial, Latest News, Press Releases
AI Data Centers, EV, and Mobile markets being penetrated by disruptive, next-gen GaN and SiC power semis, displacing legacy silicon chips. Torrance, CA., USA, November 21st, 2024— Navitas Semiconductor (Nasdaq: NVTS) has announced that the company’s revenue growth has...
by Navitas | Nov 14, 2024 | Front Page, IR, Latest News, Press Releases
Torrance, CA – November 14th, 2024— Navitas Semiconductor (Nasdaq: NVTS) the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, today announced participation in the...
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