by Navitas | Oct 28, 2024 | Front Page, IR, Latest News, Press Releases
Explore the latest GaN and SiC technologies to ‘Electrify Our World’ & deliver the most efficient and reliable power solutions for AI data centers, EVs, and consumer markets, from 20 W to 20 MW Torrance, CA – October 28th, 2024—Navitas Semiconductor (Nasdaq:...
by Navitas | Oct 24, 2024 | Front Page, IR, IR Financial, Latest News, Press Releases
Torrance, CA – October 24th, 2024— Navitas Semiconductor (Nasdaq: NVTS) today announced that it will report third quarter 2024 financial results after the market close on Monday, November 4th, 2024. Management will host a conference call and live webcast to...
by Navitas | Oct 18, 2024 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases, Product Release
IntelliWeave’s patented digital control combined with high-power GaNSafe™ and Gen 3-Fast SiC MOSFETs enable PFC peak efficiencies to 99.3% and reduces power losses by 30% reduction compared to existing solutions Torrance, CA – October 18th, 2024— At this month’s IEEE...
by Navitas | Oct 14, 2024 | Front Page, IR, Latest News, Press Releases, Product Release
Highly integrated GaN power ICs with autonomous EMI control and loss-less sensing are the industry’s fastest, smallest, and most efficient solution in an optimized DPAK-4L package. Torrance, CA – October 14th, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the industry...
by Navitas | Oct 9, 2024 | AI PR, EV PR, Front Page, IR, Latest News, Press Releases, Product Release
Rugged, cool, extended-power performance with world’s most protected GaN power semiconductor in thermally-enhanced TOLT package. Torrance, CA – Oct 9th, 2024— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and...
by Navitas | Sep 4, 2024 | EV PR, Front Page, IR, Latest News, Press Releases
Next-gen silicon carbide (SiC) power semis drive innovation in 400 and 800 V EV architectures Torrance, CA – September 4th, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide...
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