by Navitas | Dec 13, 2022 | Short post, Tech Features
GaNSense Half-bridge ICs integrate over-temperature detection and protection (OTP) circuitry to protect the IC against excessively high junction temperatures (TJ). High junction temperatures can occur due to overload, high ambient temperatures, and/or poor thermal...
by Navitas | Dec 12, 2022 | Short post, Tech Features
Lenovo’s Legion 5 and 5 Pro Gen 7 laptops are significant gaming machines, featuring AMD Rembrandt Ryzen 9 or Intel 12th-gen Alder Lake Core CPUs, AMD Radeon Vega or NVIDIA RTX GPUs, 32 GB of DDR5 memory, 1 TB of solid-state drive, up to 16” screens with 240...
by Navitas | Dec 1, 2022 | Short post, Tech Features
The Motorola X30 Pro is Motorola’s flagship smartphone, with the world’s first to feature a 200 MP main camera and sports a Snapdragon 8+ Gen 1 SoC. To support this powerful performance, the X30 Pro features a 4,610 mAhr battery, a 125 W ultra-fast wired charger, and...
by Navitas | Nov 29, 2022 | Short post, Tech Features
During the on-time of each low-side switching cycle (INH = low, INL = high), should the peak current exceed the internal OCP threshold, then the internal low-side gate drive will turn the low-side GaN power FET off quickly and truncate the low-side on-time period to...
by Navitas | Nov 2, 2022 | Front Page, In the Media, Latest News, Short post, Tech Features
Traditional Silicon high voltage power MOSFETs have maximum voltage ratings that include maximum allowable avalanche energy levels. Avalanche breakdown limits the robustness and reliability of the power MOSFET due to the rapid and uncontrolled increase in current and...
by Navitas | Nov 1, 2022 | Front Page, In the Media, Industrial Motor News, Latest News, Short post
Gallium nitride (GaN) is a wide-bandgap semiconductor which offers superior characteristics compared to older silicon equivalents, including the ability to switch up to 20x faster and increase power density by over 3x times. Implementing GaN power devices into a...
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