GaNSense Half-Bridge IC – Overview

GaNSense Half-Bridge IC – Overview

GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single component solution reduces...
Article: GaN Half-Bridge Integration Accelerates the Power-Electronics Revolution

Article: GaN Half-Bridge Integration Accelerates the Power-Electronics Revolution

Five years into the second revolution in power semiconductors, gallium-nitride-(GaN)-based mobile fast-chargers dominate flagship smartphone and laptop models, taking market share from legacy power silicon chips. This next-generation ‘wide band-gap’ technology is...