by Navitas | Oct 7, 2022 | Front Page, In the Media, Latest News, Short post
“The EE Times Green Engineering Summit was held September 13-15. The goal of this summit was an exchange of ideas by various companies on their approach towards a more sustainable, lower carbon footprint future from the generation and storage of renewable energy,...
by Navitas | Oct 6, 2022 | Short post
GaNSense Half-bridge ICs integration of lossless current sensing eliminates external current sensing resistors to increase system efficiency and reduce PCB footprint, eliminate RCS hot-spots. When comparing GaNSense technology versus existing external current sensing...
by Navitas | Sep 27, 2022 | Short post
The GaNSense half-bridge IC integrates a rich feature-set of sensing and protection all into a low inductance, thermally enhanced, industry standard PQFN 6×8 package: Loss-less current sensing Autonomous short circuit protection (<30 ns) Overtemperature...
by Navitas | Sep 21, 2022 | Front Page, In the Media, IR, IR Financial, Latest News, Short post
Navitas Semiconductor the only pure-play, next-generation power semiconductor company and industry leader in GaN power ICs recently announced the industry’s first GaNSense™ half-bridge power ICs. Ralf Higgelke, Technical Editor at WEKA FACHMEDIEN interviewed...
by Navitas | Sep 12, 2022 | Short post
GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single component solution reduces...
by Navitas | Sep 9, 2022 | Data Center News, EV News, Front Page, In the Media, Industrial Motor News, IR, Latest News, Mobile News, Short post, Solar News
Five years into the second revolution in power semiconductors, gallium-nitride-(GaN)-based mobile fast-chargers dominate flagship smartphone and laptop models, taking market share from legacy power silicon chips. This next-generation ‘wide band-gap’ technology is...
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