by Navitas | Nov 1, 2022 | Front Page, In the Media, Industrial Motor News, Latest News, Short post
Gallium nitride (GaN) is a wide-bandgap semiconductor which offers superior characteristics compared to older silicon equivalents, including the ability to switch up to 20x faster and increase power density by over 3x times. Implementing GaN power devices into a...
by Navitas | Sep 9, 2022 | Data Center News, EV News, Front Page, In the Media, Industrial Motor News, IR, Latest News, Mobile News, Short post, Solar News
Five years into the second revolution in power semiconductors, gallium-nitride-(GaN)-based mobile fast-chargers dominate flagship smartphone and laptop models, taking market share from legacy power silicon chips. This next-generation ‘wide band-gap’ technology is...
![TWST.COM: Navitas Semiconductor Corp. (NVTS) is the Way to Invest in Gallium Nitride [GaN] Fast Charging Electronics](https://navitassemi.com/wp-content/uploads/2022/07/TWST-Gene-Interview.jpg)
by Navitas | Jul 12, 2022 | Data Center News, EV News, Front Page, In the Media, Industrial Motor News, IR, IR Financial, Latest News, Short post
Navitas Semiconductor (NVTS) CEO Gene Sheridan wants investors to know that the environmental benefits are also commercial benefits. “Gallium Nitride [GaN], while it’s very advanced in material, and very advanced with the design innovations that Navitas [Semiconductor...
by Navitas | May 25, 2022 | Front Page, In the Media, Industrial Motor News, IR, Latest News, Short post
“Traditional silicon MOSFETs and low-PWM–frequency inverters are being phased out in DC and battery-powered motor applications in favor of GaN-based, high-PWM–frequency inverters. The benefits include increased system efficiency and the elimination of large passive...
by Navitas | May 19, 2022 | Front Page, In the Media, Industrial Motor News, IR, IR Financial, Latest News, Short post, Tech Features
“The next big step in efficiency, both in the inverter and motor as well as in the overall system, can be achieved by using gallium nitride in the power stages. GaN-based devices are much closer to the ideal switch, offering significantly lower switching losses...
Recent Comments