by Navitas | Feb 1, 2023 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Navitas to showcase how next-gen GaN and SiC power semis address a diverse $22B/yr market, with an exciting, informative in-person experience Torrance, CA – February 1st, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Jan 31, 2023 | Awards, Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Proprietary GaN-IC technology integrates two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation to create a fundamental power-stage building block for power electronics Torrance, CA – January 31st, 2023 – Navitas...
by Navitas | Jan 30, 2023 | Uncategorised
SiC MOSFETs offer superior conductivity and switching performance compared to silicon due to their ‘wide bandgap characteristics and high electric-field strength. However, traditional designs using legacy planar or trench techniques must compromise between...
by Navitas | Jan 26, 2023 | Front Page, IR, Latest News, Press Releases, Solar PR
Navitas’ GeneSiC silicon carbide (SiC) MOSFETs simplify design, expand market size for 4.6 kW KATEK solar inverters Torrance, CA., USA, and Memmingen, Germany, January 27th, 2023— Navitas Semiconductor (Nasdaq: NVTS), and KATEK GROUP (FRA: KTEK) announce that KATEK’s...
by Navitas | Jan 20, 2023 | CES23Feat, Front Page, In the Media, Latest News, Short post
Just a few years ago, people asked when GaN would happen. And now, when GaN is already here, it’s probably a bit late to join the GaN party. Navitas is one of the few GaN device specialists that are now part of this power electronics market disruption. The year 2023...
by Navitas | Jan 19, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Strategic silicon control IC capability expected to accelerate next-generation GaN and SiC share gains vs. legacy silicon power devices across a broad range of markets Torrance, CA – January 19th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
by Navitas | Jan 17, 2023 | Mobile AI, Short post, Tech Feature
OPPO’s 50W Mini is a true next-generation GaN fast charger using the latest high-speed topology and enabled by GaNFast Power ICs. A ‘pulsed’ power conversion topology achieves the world’s smallest and thinnest form-factor. Measuring only 82.2 x 39.0 x 10.5 mm (34 cc)...
by Navitas | Jan 17, 2023 | Mobile AI, Short post, Tech Feature
Samsung’s flagship Galaxy S22 Ultra and S22+ smartphones are the latest-generation flagship smartphones from Samsung. They are supported with the small, powerful 45W Super Fast charger, which has the highest power density of any Samsung charger, enabled by NV6014,...
by Navitas | Jan 12, 2023 | Mobile AI, Short post, Tech Feature
Anker’s Nano II 100W GaNPrime charger is 34% smaller than conventional silicon 96W charger, with similar capabilities plus two extra ports to power up your MacBook, iPhone, and AirPods all at the same time from a single charger. Using power GaN ICs enables a 100%...
by Navitas | Jan 9, 2023 | Front Page, In the Media, IR, IR Financial, IR Financial, Latest News, Press Releases
Leading-edge gallium nitride (GaN) and silicon carbide (SiC) technologies rapidly taking share from legacy silicon chips in $22B/yr market opportunity Torrance, CA – January 9th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
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