by Navitas | Apr 25, 2025 | Front Page, IR, IR Financial, Latest News, Press Releases
Richard Hendrix Appointed Chair of the Board – Executive Steering Committee Formed to Advance Growth Strategy TORRANCE, Calif., April 24, 2025 – Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and...
by Navitas | Apr 22, 2025 | Front Page, IR, Latest News, Press Releases
Latest releases include bi-directional GaNFast ICs with IsoFast™ drivers, auto-qualified GaNSafe ICs, dedicated GaNSense Motor Drive ICs, and high-reliability SiCPAK modules. TORRANCE, CA – April 22nd, 2025—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
by Navitas | Apr 21, 2025 | Front Page, IR, IR Financial, Latest News, Press Releases
TORRANCE, CA – April 21, 2025— Navitas Semiconductor (Nasdaq: NVTS) today announced that it will report first quarter 2025 financial results after the market close on Monday, May 5th, 2025. Management will host a conference call and live webcast to present the...
by Navitas | Apr 17, 2025 | Front Page, IR, Latest News, Press Releases, Product Release
Advanced low-cost epoxy-resin potting technology enables 5x lower thermal resistance shift for extended system lifetime. TORRANCE, CA – April 17th, 2025 — Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and...
by Navitas | Apr 15, 2025 | EV PR, Front Page, IR, Latest News, Press Releases
High-power GaNSafe ICs bring production-ready performance to EVs, unlocking unprecedented power density and efficiency for on-board chargers (OBCs) and HV-LV DC-DC converters applications. TORRANCE, CA – April 15th, 2025—Navitas Semiconductor (Nasdaq: NVTS), the only...
by Navitas | Apr 9, 2025 | AI PR, Data Center PR, EV PR, Front Page, IR, Latest News, Press Releases, Solar PR
Joint lab collaboration expected to accelerate GaN & SiC adoption in AI data centers, EV, solar and energy storage systems (ESS) TORRANCE, CA – April 9th, 2025—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor...
by Navitas | Apr 3, 2025 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases
GaNSense™ technology boosts 8x power for AI data centers, telecommunications, and industrial equipment in ultra-high power density DC-DC converters. TORRANCE, CA – April 3rd, 2025—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Mar 17, 2025 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases
High-power GaNSafe™ & GeneSiC MOSFETs power new levels of energy efficiency, reduce electricity costs, and extend system lifetime. TORRANCE, CA – March 17th, 2025—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company...
by Navitas | Mar 15, 2025 | Front Page, Latest News, Short post
Navitas has announced a latest breakthrough of the world’s first production-released 650 V bi-directional GaNFast ICs™ and IsoFast™ high-speed isolated gate-drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from...
by Navitas | Mar 13, 2025 | Front Page, IR, Latest News, Press Releases
Bi-Directional GaNFast™ plus new IsoFast™ drivers enable advanced ‘single-stage’ topologies to further enhance efficiency, power density, and performance in AC-DC and AC-AC conversion. Torrance, CA – March 13th, 2025—Navitas Semiconductor (Nasdaq: NVTS), the...
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