by Navitas | Nov 28, 2024 | AI Blog, AI News, Data Center News, Front Page, Latest News
And this is forecast to rise to 190 by 2026 Fig 1: Data centers global share of energy consumption will grow from being the 11th biggest electricity consumer in 2022 to the 6th biggest in 2026.* Data Center Consumption According to 2024 data from the International...
by Navitas | Nov 26, 2024 | Front Page, IR, IR Financial, Latest News, Press Releases
Torrance, CA – November 26th, 2024, Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced participation in the upcoming investor...
by Navitas | Nov 21, 2024 | Awards, Front Page, IR, IR Financial, Latest News, Press Releases
AI Data Centers, EV, and Mobile markets being penetrated by disruptive, next-gen GaN and SiC power semis, displacing legacy silicon chips. Torrance, CA., USA, November 21st, 2024— Navitas Semiconductor (Nasdaq: NVTS) has announced that the company’s revenue growth has...
by Navitas | Nov 14, 2024 | Front Page, IR, Latest News, Press Releases
Torrance, CA – November 14th, 2024— Navitas Semiconductor (Nasdaq: NVTS) the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, today announced participation in the...
by Navitas | Nov 5, 2024 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases
Next-generation solution achieves 98% efficiency with high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs for AI and hyperscale data centers. Torrance, CA – November 5th, 2024—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Nov 4, 2024 | Front Page, IR, IR Financial, Latest News, Press Releases
Record sales in GaN mobile fast-charger market New, low-voltage GaN technology enters 48V AI data center, EV and robotics markets Strategic partnership with Infineon Technologies enables customer dual sourcing Streamlined market focus and cost structure...
by Navitas | Oct 31, 2024 | Data Center PR, Front Page, IR, Latest News, Press Releases
Latest GaNSafe™, Gen-3 Fast SiC MOSFETs, and GaNSlim™ power ICs deliver high-efficiency, high-power density performance for AI data centers, EV charging, & consumer solutions. Torrance, CA – October 31st, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the industry...
by Navitas | Oct 28, 2024 | Front Page, IR, Latest News, Press Releases
Explore the latest GaN and SiC technologies to ‘Electrify Our World’ & deliver the most efficient and reliable power solutions for AI data centers, EVs, and consumer markets, from 20 W to 20 MW Torrance, CA – October 28th, 2024—Navitas Semiconductor (Nasdaq:...
by Navitas | Oct 24, 2024 | Front Page, IR, IR Financial, Latest News, Press Releases
Torrance, CA – October 24th, 2024— Navitas Semiconductor (Nasdaq: NVTS) today announced that it will report third quarter 2024 financial results after the market close on Monday, November 4th, 2024. Management will host a conference call and live webcast to...
by Navitas | Oct 18, 2024 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases, Product Release
IntelliWeave’s patented digital control combined with high-power GaNSafe™ and Gen 3-Fast SiC MOSFETs enable PFC peak efficiencies to 99.3% and reduces power losses by 30% reduction compared to existing solutions Torrance, CA – October 18th, 2024— At this month’s IEEE...
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