by Navitas | Nov 5, 2024 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases
Next-generation solution achieves 98% efficiency with high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs for AI and hyperscale data centers. Torrance, CA – November 5th, 2024—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Nov 4, 2024 | Front Page, IR, IR Financial, Latest News, Press Releases
Record sales in GaN mobile fast-charger market New, low-voltage GaN technology enters 48V AI data center, EV and robotics markets Strategic partnership with Infineon Technologies enables customer dual sourcing Streamlined market focus and cost structure...
by Navitas | Oct 31, 2024 | Data Center PR, Front Page, IR, Latest News, Press Releases
Latest GaNSafe™, Gen-3 Fast SiC MOSFETs, and GaNSlim™ power ICs deliver high-efficiency, high-power density performance for AI data centers, EV charging, & consumer solutions. Torrance, CA – October 31st, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the industry...
by Navitas | Oct 28, 2024 | Front Page, IR, Latest News, Press Releases
Explore the latest GaN and SiC technologies to ‘Electrify Our World’ & deliver the most efficient and reliable power solutions for AI data centers, EVs, and consumer markets, from 20 W to 20 MW Torrance, CA – October 28th, 2024—Navitas Semiconductor (Nasdaq:...
by Navitas | Oct 24, 2024 | Front Page, IR, IR Financial, Latest News, Press Releases
Torrance, CA – October 24th, 2024— Navitas Semiconductor (Nasdaq: NVTS) today announced that it will report third quarter 2024 financial results after the market close on Monday, November 4th, 2024. Management will host a conference call and live webcast to...
by Navitas | Oct 18, 2024 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases, Product Release
IntelliWeave’s patented digital control combined with high-power GaNSafe™ and Gen 3-Fast SiC MOSFETs enable PFC peak efficiencies to 99.3% and reduces power losses by 30% reduction compared to existing solutions Torrance, CA – October 18th, 2024— At this month’s IEEE...
by Navitas | Oct 15, 2024 | Front Page, In the Media, IR, Latest News, Short post
“My entire career and personal life have revolved around identifying market opportunities and addressing underserved needs. The most significant challenge I’ve encountered is the electrification of our planet, which ties into sustainability, fossil fuel...
by Navitas | Oct 14, 2024 | Front Page, IR, Latest News, Press Releases, Product Release
Highly integrated GaN power ICs with autonomous EMI control and loss-less sensing are the industry’s fastest, smallest, and most efficient solution in an optimized DPAK-4L package. Torrance, CA – October 14th, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the industry...
by Navitas | Oct 9, 2024 | AI PR, EV PR, Front Page, IR, Latest News, Press Releases, Product Release
Rugged, cool, extended-power performance with world’s most protected GaN power semiconductor in thermally-enhanced TOLT package. Torrance, CA – Oct 9th, 2024— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and...
by Navitas | Oct 7, 2024 | AI Blog, AI News, Data Center News, Front Page, Latest News
Blackwell configurations will require 60 kW to 120 kW per rack but fewer than 5% of the world’s data centers are capable of supporting even 50kW per rack Generative AI’s proliferation is far from complete, but its rise has been (without trying to hyperbolise) little...
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