by Navitas | Aug 30, 2017 | Latest News, Press Releases
China’s growing demand for next-generation technology draws the worldwide GaN leader to Power 2017 EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced its participation in China’s annual multi-city power conference “Power 2017”, where new GaN Power IC...
by Navitas | Aug 8, 2017 | Latest News, Press Releases
World’s first GaN power ICs chosen to deliver unprecedented efficiency & power density EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced that the US Department of Energy’s PowerAmerica Institute has selected Navitas to enable a new class of...
by Navitas | Aug 1, 2017 | In the Media
In my prior blogs, I spoke about how highly-efficient and fast-switching GaN power ICs are combining together with soft-switching topologies and high-frequency magnetics to create a whole new class of high-efficiency and high-density power electronics. In this blog,...
by Navitas | Jul 31, 2017 | In the Media
In this episode of the PSDcast, we chat with industry luminary Gene Sheridan, whose company, Navitas, designed the industry’s first Gallium Nitride power ICs. View on the Power Systems Design Website: PSDcast – The Industry’s First GaN Power ICs
by Navitas | Jul 15, 2017 | Press Releases
Four Decades of Power Electronics Achievements Dr. Fred Lee transitions CPES Leadership after 40 years of growth and innovation. The Center for Power Electronic Systems (CPES) at Virginia Tech University became the premier power electronics institute in the world...
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