by Navitas | Jul 6, 2017 | In the Media
Navitas Semiconductor was formed in 2013 to enable a high-speed revolution in power electronics with the invention of the industry’s first GaN power ICs which deliver up to a 100x increase in switching speeds while increasing energy savings by 40% or more....
by Navitas | May 3, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Executives Showcase Industry-First GaN Power ICs at PCIM Europe 2017 EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced it will showcase GaN Power IC advances at this year’s PCIM Europe in Nuremberg, Germany May 16th...
by Navitas | Mar 13, 2017 | In the Media
The debut article on the world’s first half-bridge GaN Power ICs explores the new world of high-frequency power conversion. Half-bridge circuits are essential building blocks in the power electronics industry, used in everything from smartphone chargers and...
by Navitas | Mar 9, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] English Translation: Navitas Announces Significant GaN Power IC Coverage at APEC 2017 业界首创氮化镓 (GaN) 功率 IC 在高密度, 高效率转换器方面树立了新标准 EL SEGUNDO, Calif.–(PRWeb) Navitas （音译:纳微） 半导体公司今天宣布，公司将在 2017 年 3 月 26...
by Navitas | Feb 22, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] English Translation: Navitas Produces World’s First Integrated Half-Bridge GaN Power IC AllGaN™集成技术解决了电力电子30年来在高速高压方面的挑战 加利福尼亚州埃尔塞贡多EL SEGUNDO, Calif.–(PRWeb)—Navitas...
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