by Navitas | Aug 5, 2024 | Front Page, IR, IR Financial, Press Releases
Q2 revenue and gross margin at higher end of guidance First-half revenue up nearly 40% year-on-year Important AI data center advances in power systems roadmap to support Hopper, Blackwell, Blackwell Ultra and Rubin processor platforms TORRANCE, CA – August 5th,...
by Navitas | Aug 5, 2024 | Front Page, IR, Latest News, Mobile PR, Press Releases
Next-gen GaNFast™ gallium nitride power ICs now fast-charge Samsung’s Galaxy Series-A, Galaxy Z Fold6 and Galaxy Z Flip6 phones Torrance, CA – August 5th, 2024— Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN)...
by Navitas | Aug 2, 2024 | EV PR CN, Front Page, IR CN, Latest News, Press Releases CN
第三代650V快速碳化硅MOSFET凭借坚固、热性能强的TOLL封装，为关键、高可靠性、高效率的应用带来最高功率密度 加利福尼亚州托伦斯2024年8月1日讯 — 唯一全面专注的下一代功率半导体公司及GaNFast™氮化镓功率芯片和GeneSiC™碳化硅功率器件行业领导者——纳微半导体（纳斯达克股票代码：NVTS）今日宣布为其最新的第三代快速碳化硅（G3F）MOSFETs产品组合新增一款坚固耐用的热性能增强型高速表贴TOLL封装产品，能为大功率、可靠性要求高的应用带来高效、稳定的功率转换。 纳微GeneSiC...
by Navitas | Aug 1, 2024 | AI PR, EV PR, Front Page, Latest News, Press Releases
3rd gen 650 V ‘fast’ silicon carbide (SiC) MOSFETs deliver highest power density in robust, thermally enhanced packaging for critical, high-reliability, high-efficiency applications Torrance, CA – August 1st, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the industry...
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