by Navitas | Feb 12, 2017 | In the Media
“GaN has the potential to displace a large percentage of the $15bn power silicon market, but adoption has been partially limited by the system challenges in cost-effectively driving and controlling the GaN power device at high speeds,” notes power...
by Navitas | Feb 12, 2017 | In the Media
Navitas Semiconductor today announced the immediate availability of production qualified iDrive Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN technology. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with...
by Navitas | Feb 7, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas 开始生产氮化镓(GaN)功率 IC Production qualification of 650V AllGaN™ Power ICs enables a high-speed revolution in power electronics. EL SEGUNDO, California USA – (PRWeb) – Navitas Semiconductor today...
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