by Navitas | Feb 25, 2026 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
TORRANCE, Calif., Feb. 25, 2026 – Navitas Semiconductor, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the Morgan Stanley...
by Navitas | Feb 12, 2026 | AI PR, Data Center PR, Front Page, Latest News, Press Releases
The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure, and industrial electrification. TORRANCE, CA –...
by Navitas | Feb 9, 2026 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases
Industry-leading high-power-density full-brick DC-DC platform leveraging latest 650 V and 100 V GaNFast™ FETs to deliver unmatched efficiency, power density, and performance for 800 V DC and +/-400 V architectures. TORRANCE, CA – February, 9th, 2026 — Navitas...
by Navitas | Jan 28, 2026 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
TORRANCE, Calif., Jan. 28, 2026 – Navitas Semiconductor, (Nasdaq: NVTS) today announced that it will report fourth quarter and full year 2025 financial results on Tuesday, February 24, 2026, after the market close. Navitas’ President and CEO, Chris Allexandre, and...
by Navitas | Jan 7, 2026 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
TORRANCE, Calif. , Jan. 7, 2026 – Navitas Semiconductor, an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the 28th Annual Needham Growth...
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