by Navitas | Jan 12, 2023 | Mobile AI, Short post, Tech Feature
Anker’s Nano II 100W GaNPrime charger is 34% smaller than conventional silicon 96W charger, with similar capabilities plus two extra ports to power up your MacBook, iPhone, and AirPods all at the same time from a single charger. Using power GaN ICs enables a 100%...
by Navitas | Jan 9, 2023 | Front Page, In the Media, IR, IR Financial, IR Financial, Latest News, Press Releases
Leading-edge gallium nitride (GaN) and silicon carbide (SiC) technologies rapidly taking share from legacy silicon chips in $22B/yr market opportunity Torrance, CA – January 9th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Dec 29, 2022 | Mobile AI, Short post, Tech Feature
The Lenovo 65W USB-C GaN Adapter ushers in a new age of safe, efficient portable charging. Powered by Gallium Nitride (GaN) ICs, this charger is up to 55% smaller, 60% lighter, 30% more power-efficient compared to legacy silicon chargers. With PD 3.0 certification, it...
by Navitas | Dec 28, 2022 | CES23Feat, Front Page, IR, IR Financial, Latest News, Press Releases
Leading consumer brands Anker, OnePlus, Spigen and Ugreen highlight the latest smartphone and laptop charging benchmarks enabled by next-generation GaN power ICs Torrance, CA – December 28th, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
by Navitas | Dec 20, 2022 | Short post
During first start-up pulses or during hard-switching conditions, it is desirable to limit the slew rate (dV/dt) of the drain of the low-side GaN power FET during turn-on. This is necessary to reduce EMI or reduce circuit switching noise. To program the turn-on dV/dt...
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