by Navitas | Feb 2, 2021 | Awards, Front Page, IR, Latest News, Press Releases
Gallium nitride (GaN) continues to ramp into $20B silicon chip market DUBLIN, Ireland — (PRWeb) Navitas Semiconductor today announced they have been awarded ASPENCORE’s Electronic Products’ “Power Product of the Year” 2020. Navitas’ GaN Power IC NV612x series...
by Navitas | Dec 14, 2020 | Awards, Front Page, IR, Latest News, Press Releases
Big audience for the live debut of the ‘Little Star GaN’ twins! DUBLIN, Ireland — (PRWeb) Navitas Semiconductor today announced it had been recognized with the “Semiconductor Design Innovation Excellence Award” (年度半导体材料设计卓越创新奖) by the China Communication...
by Navitas | Nov 11, 2020 | Awards, Front Page, In the Media, IR, Latest News, Press Releases
Gallium Nitride Triumphs at Prestigious ASPENCORE “Double Summits” World Electronics Achievements Awards DUBLIN, Ireland — (PRWeb) Navitas Semiconductor today announced it had been recognized for with the “Outstanding Innovative Company of the Year”...
by Navitas | Jul 16, 2020 | Awards, Front Page, IR, Latest News, Press Releases
EE Times ‘Silicon 100’ ranks Navitas, the GaNFast™ Power IC leader as a top technology start-up DUBLIN, IRELAND –(PRWeb)— Navitas Semiconductor announced today its selection to the prestigious 2020 Electronic Engineering Times ‘Silicon 100’ start-up ranking....
by Navitas | Jan 2, 2020 | Awards, Front Page, In the Media, IR, Press Releases
GaNFast Power IC Technology Beats 100+ Challengers EL SEGUNDO, California— (PRWeb) – Navitas Semiconductor announced today that it was awarded the Shanghai Zhangjiang 895 and Zhangjiang Science City · ICV Pioneer Alliance “Innovation Star” Award on...
by Navitas | Dec 5, 2019 | Awards
DULLES, VA, December 5, 2019 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2019 R&D 100 Award for development of SiC-Based Monolithic Transistor-Rectifier Switch. GeneSiC Semiconductor Inc, a key...
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