Gallium Nitride Triumphs at Prestigious ASPENCORE “Double Summits” World Electronics Achievements Awards
DUBLIN, Ireland — (PRWeb) Navitas Semiconductor today announced it had been recognized for with the “Outstanding Innovative Company of the Year” award by ASPENCORE. Navitas was selected based on the company’s extraordinary innovations in the field of Galliun Nitride with it’s GaN power ICs which are transforming industries from mobile chargers, to data centers, solar inverters and electric EVs and mobility applications. The award was presented to Navitas at the “Double Summits” World Electronics Achievements Awards ceremony at the Sheraton Shenzhen Futian Hotel, PRC, on November 5th.
Gallium Nitride (GaN) is a next-generation power semiconductor technology that runs up to 100x faster than old, slow silicon chips, with dramatic improvements in energy savings and power density. Navitas’ GaNFast power ICs integrate GaN power (FET) with drive, control, and protection to enable up to 3x more power in half the size and weight.
“ASPENCORE’s global analyst team was impressed by Navitas’ vision to upgrade power electronics and fast charging – with their strategy to replace the old, slow silicon chips with new, fast gallium nitride”, said Yorbe ZHANG, Head of APAC & Head of Content for ASPENCORE. “Precise tactical execution of this clear strategy has driven 10x revenue growth at big-name companies like Lenovo, Xiaomi and OPPO in the very competitive fast-charger market.”
“Navitas is honored to receive this prestigious award from ASPENCORE, recognizing the GaNFast revolution in power electronics to replace the silicon chip.” said Gene Sheridan, Co-Founder and CEO of Navitas. “Unprecedented GaN integration, breakthrough system innovations and close collaboration with the top OEMs in the world are backed by a world-class management team and top-tier financial investors. After the successful penetration in the mobile fast-charger market, you will soon see gallium nitride disrupting industries and accelerating energy savings and carbon neutral initiatives in markets including data center, 5G base stations, solar inverters, energy storage, LED lighting and eMobility applications.”
ASPENCORE is the world’s leading media group within the technical electronics sector. ASPENCORE’s prior mission is to provide electronics engineers and technical practitioners with the highest quality content in order to aid them in innovation, thus helping spurring growth of the entire electronics market. We believe that technology and innovation are the forces to reshape our world. More than half of our team members are engineers; thus, we know engineers and are committed to meeting their needs. At the same time, ASPENCORE’s highly trusted media channels provides a great platform for vendors to reach out to technology decision makers.
Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in 2014. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 300 patents among its founders. GaN power ICs integrate GaN power (FET) with drive, control and protection to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets. Over 100 Navitas patents are issued or pending, and over 8 million GaNFast power ICs have been shipped with zero failures.
Navitas Semiconductor, GaNFast and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.