by Navitas | Mar 13, 2017 | In the Media
The debut article on the world’s first half-bridge GaN Power ICs explores the new world of high-frequency power conversion. Half-bridge circuits are essential building blocks in the power electronics industry, used in everything from smartphone chargers and...
by Navitas | Mar 2, 2017 | In the Media
Navitas CEO, Gene Sheridan, shares his view on a major shift in power electronics after the industry’s 30-year plateau. The combination of resonant topologies, fast GaN transistors and GaN analog integration completes the needed trifecta for extraordinary...
by Navitas | Feb 17, 2017 | In the Media
Integrated GaN Power IC building blocks enable fast-switching topologies with simple “digital-in, power-out” capability. In power conversion, fast switching combined with high efficiency enables small size, low weight, and lower system cost. To achieve this, we need...
by Navitas | Feb 12, 2017 | In the Media
Navitas Semiconductor’s iDrive Gallium Nitride (GaN) Power ICs use the company’s proprietary AllGaN technology, enabling up to 100x higher frequencies than silicon. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with increasing...
by Navitas | Feb 12, 2017 | In the Media
Navitas Semiconductor today announced the immediate availability of production qualified iDrive Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN technology. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with...
by Navitas | Feb 12, 2017 | In the Media
“GaN has the potential to displace a large percentage of the $15bn power silicon market, but adoption has been partially limited by the system challenges in cost-effectively driving and controlling the GaN power device at high speeds,” notes power...
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