by Navitas | Jan 25, 2024 | EV PR, Front Page, IR, Latest News, Press Releases
New joint lab facility and aligned product & system roadmaps to deliver advanced battery-electric and fuel-cell vehicle power platforms Torrance, CA – January 25th, 2024—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor...
by Navitas | Jan 10, 2024 | Front Page, IR, Latest News, Press Releases
Torrance, Calif., Jan. 10, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, announced the appointment of...
by Navitas | Jan 9, 2024 | Front Page, IR, IR Financial, Latest News, Press Releases
CJS webcast Link. Needham webcast Link Customer pipeline Up 65% to $1.25B, target to grow 6x-10x market rate, with leading-edge GaN & SiC Torrance, CA – January 9th, 2024, Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and...
by Navitas | Dec 19, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Customer pipeline Up 65% to $1.25B, target to Grow 6x-10x market rate, with leading-edge GaN & SiC Torrance, CA., USA, December 19th, 2023 — Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry...
by Navitas | Dec 8, 2023 | Front Page, IR, Latest News, Press Releases
From EVs to AI data centers, and renewables to mobile fast charging, next-gen GaN and SiC replace legacy silicon chips in a diverse $22B/yr market Torrance, CA – December 8th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Dec 6, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Ranking recognizes growth driven by strong demand for next-gen GaN and SiC power semis in EV, solar, appliance / industrial, data center and mobile Torrance, CA., USA, December 6th, 2023: Navitas Semiconductor (Nasdaq: NVTS), the pure-play industry leader in...
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