New Gallium Nitride (GaN) Technology Delivers Incomparable Speed
BEIJING, PRC and DUBLIN, IRELAND –(PRWeb) Lenovo and Navitas Semiconductor announced today that the fastest, most powerful charger for Legion e-sports, using GaNFast power ICs has been launched into mass production and supplied ‘in-box’ with every Legion phone. Next-generation gallium nitride (GaN) technology enables the 90W dual USB-C output charger to deliver 40% more power and charge 25% faster than previous best-in-class hardware. The speed of the Legion charger is worthy of the e-sports phone processing power.
Measuring only 66 x 62 x 28 mm (115 cc), the 90W Legion fast charger is a true savior for gamers as it can fast charge a 5,000mAh battery to 100% in only 30 minutes, made possible by gallium nitride (GaNFast) technology. Running twenty times faster than the traditional, slow silicon (Si), it improves the power by three times, thus making the charging speed three times faster, in half the size and weight of the old silicon chargers.
“No matter how imaginative you are, you will still be startled by the data. Our charging speed will bring extraordinary experience to users. I’m quite astonished at the revolutionary influence brought by the advanced GaNFast technology of Navitas Semiconductor. We have been discussing about a possibility, and today this possibility has come true. One of the missions of Lenovo is to create the most excellent and most innovative products in the world. It is a great pleasure for us to establish long-term cooperation and explore more new possibilities with Navitas Semiconductor,” said Mr. Jin CHEN, General Manager of the Cellphone Business Department of Lenovo China.
“For Navitas Semiconductor, the cooperation with Lenovo is a great milestone because Lenovo is not only a top phone manufacturer but also a top PC device manufacturer. GaNFast power ICs are a single chip integrating GaN field-effect transistor (FET), GaN digital and GaN analog circuits. It rapidly promotes the commercialization of the new generation of high-frequency, high-efficiency and high-power-density power converters. It is a great honor for Navitas Semiconductor to provide GaNFast power ICs for Lenovo, to help Lenovo improve user experience and technological innovation,” noted Yingying (Charles) ZHA, VP & General Manager of Navitas China.
Lenovo has always devoted itself to manufacturing and selling the most reliable, safest and user-friendly technical products, and unremittingly helping customers raise productivity and improve quality of life. Its core values include:
- Customer achievement – devotion to customers’ satisfaction and success
- Innovation in entrepreneurship – pursuing high speed and efficiency, and focusing on the innovations that affect customers and the company
- Truth-seeking – making decisions and managing business based on facts, and
- Achieving good faith and integrity – establishing credible and responsible interpersonal relationships.
Navitas Semiconductor Inc. is the world’s first GaN Power IC company. Founded in 2014 and headquartered in Ireland, it has offices or R&D centers in Shanghai, Hangzhou and Shenzhen in China as well as Los Angeles, USA. Navitas has a strong and growing team of power semiconductor industry experts with rich experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 300 patents among its founders. GaNFast power ICs integrate GaN power, GaN analog and GaN logic circuits to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets. Over 100 Navitas patents are issued or pending.
Navitas Semiconductor, GaNFast and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.