by Navitas | Nov 16, 2022 | Awards, Front Page, IR, IR Financial, Latest News, Press Releases
Three-year revenue growth of 2,300% for next-generation integrated gallium nitride (GaN) ICs that drive up to 3x more power, or 3x faster charging in half the size and weight vs. legacy silicon chips Torrance, CA., November 16th, 2022—Navitas Semiconductor (Nasdaq:...
by Navitas | Nov 15, 2022 | Awards, Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Embedded Computing Design awards Navitas for design excellence and market impact at world’s largest power electronics trade fair Torrance, CA., November 15th, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company...
by Navitas | Nov 14, 2022 | Consumer PR, Front Page, IR, Latest News, Mobile PR, Press Releases
Next-gen gallium nitride (GaN) ICs fast-charge from 1-50% in only 7 minutes Torrance, CA., November 14th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company, has announced its next-gen GaNFast power ICs have...
by Navitas | Nov 11, 2022 | Front Page, IR, Latest News, Press Releases
Cooperation will bring significant advantages to next-generation systems using power-efficient gallium-nitride (GaN) technology across a spectrum of applications Torrance, CA., and Brussels, Belgium – 11th November, 2022 – Navitas Semiconductor (Nasdaq: NVTS), an...
by Navitas | Nov 9, 2022 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Quarterly revenues Increased 82% over Q3 2021New Long-Term SiC Supplier Agreements Enable 5x Capacity IncreaseStrong demand across data center, EV, energy storage, solar, home appliance and industrial markets TORRANCE, Calif., Nov. 09, 2022 (GLOBE NEWSWIRE) —...
by Navitas | Nov 3, 2022 | EV PR, Front Page, IR, Latest News, Press Releases
New lab accelerates development of advanced EV high-voltage applications using Navitas’ GaNFast™ and GeneSiC™ power semiconductors Torrance, CA – November 3rd, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor...
by Navitas | Nov 2, 2022 | Front Page, In the Media, Latest News, Short post
Traditional Silicon high voltage power MOSFETs have maximum voltage ratings that include maximum allowable avalanche energy levels. Avalanche breakdown limits the robustness and reliability of the power MOSFET due to the rapid and uncontrolled increase in current and...
by Navitas | Nov 1, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
Torrance, CA – November 1st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the pure-play, industry leader in next-generation power semiconductors, today announced that it will report third quarter 2022 financial results after the market close on Wednesday, November...
by Navitas | Nov 1, 2022 | Front Page, In the Media, Industrial Motor News, Latest News, Short post
Gallium nitride (GaN) is a wide-bandgap semiconductor which offers superior characteristics compared to older silicon equivalents, including the ability to switch up to 20x faster and increase power density by over 3x times. Implementing GaN power devices into a...
by Navitas | Nov 1, 2022 | Front Page, IR, Latest News, Press Releases
GaNFast™ and GeneSiC™ technologies deliver faster charging, energy savings, and lower system costs than legacy silicon chips Torrance, CA – October 31st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry leader in gallium nitride (GaN) power ICs and...
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