by Navitas | Nov 1, 2022 | Front Page, In the Media, Industrial Motor News, Latest News, Short post
Gallium nitride (GaN) is a wide-bandgap semiconductor which offers superior characteristics compared to older silicon equivalents, including the ability to switch up to 20x faster and increase power density by over 3x times. Implementing GaN power devices into a...
by Navitas | Nov 1, 2022 | Front Page, IR, Latest News, Press Releases
GaNFast™ and GeneSiC™ technologies deliver faster charging, energy savings, and lower system costs than legacy silicon chips Torrance, CA – October 31st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry leader in gallium nitride (GaN) power ICs and...
by Navitas | Oct 31, 2022 | Front Page, IR, Latest News, Press Releases
Industry-leading GaN and SiC technologies for $22B market presented in keynote, industrial papers and exhibition booth Torrance, CA – October 31st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the pure-play, industry leader in next-generation power semiconductors...
by Navitas | Oct 26, 2022 | EV News, Front Page, In the Media, Latest News, Short post
“The opportunity for GaN in EV traction is enhanced as vehicles are moving to four, independent, ‘in-wheel’ traction motors to eliminate a single motor as a point of total failure. This eliminates mechanical drive-train components, delivers four-wheel drive for...
by Navitas | Oct 24, 2022 | Awards, Front Page, IR, Latest News, Press Releases
Founder of GeneSiC Semiconductor receives prestigious honor from NCSU, home of US SiC Research El Segundo, CA – October 24th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company, announced that Dr. Ranbir Singh,...
by Navitas | Oct 21, 2022 | Short post
GaNSense Half-bridge ICs integrated over current protection (OCP) provides cycle-by-cycle over-current detection and protection circuitry to protect the low-side GaN power FET against high current levels Find out more in our whitepaper and Application Note AN018:...
by Navitas | Oct 18, 2022 | Consumer PR, Front Page, IR, IR Financial, Latest News, Press Releases
Industry-leading, high-speed GaNFast™ and GeneSiC™ technologies drive a $22B/year market opportunity at the world’s leading electronics trade fair El Segundo, CA – October 18th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Oct 12, 2022 | Short post
GaNSense Half-bridge ICs integrated current sense (VCS) feature shows excellent real-time matching and tracking performance versus inductor current (IL) at 1 A peak current levels for 120 W in an asymmetrical half-bridge (AHB) application circuit during steady-state,...
by Navitas | Oct 12, 2022 | Data Center News, EV News, Front Page, In the Media, Latest News, Mobile News, Short post, Solar News
“GaN power device maker, Navitas, believes its latest half-bridge power IC will deliver the high powers and efficiencies that mobile phone chargers, electric vehicles, photovoltaics and data centres need”. “IN EARLY September this year, California-based GaN power...
by Navitas | Oct 7, 2022 | Front Page, IR, Latest News, Short post, Tech Feature
GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single-package solution reduces component...
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