by Navitas | Feb 17, 2017 | Latest News
Navitas AllGaN enables 2x faster charging with the 45W USB-PD Type C mobile adapter. Mobile World Congress is the world’s largest gathering for the mobile industry, organised by the GSMA and held in the Mobile World Capital Barcelona, 27 February – 2 March 2017....
by Navitas | Feb 17, 2017 | In the Media
Integrated GaN Power IC building blocks enable fast-switching topologies with simple “digital-in, power-out” capability. In power conversion, fast switching combined with high efficiency enables small size, low weight, and lower system cost. To achieve this, we need...
by Navitas | Feb 12, 2017 | In the Media
Navitas Semiconductor’s iDrive Gallium Nitride (GaN) Power ICs use the company’s proprietary AllGaN technology, enabling up to 100x higher frequencies than silicon. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with increasing...
by Navitas | Feb 12, 2017 | In the Media
“GaN has the potential to displace a large percentage of the $15bn power silicon market, but adoption has been partially limited by the system challenges in cost-effectively driving and controlling the GaN power device at high speeds,” notes power...
by Navitas | Feb 12, 2017 | In the Media
Navitas Semiconductor today announced the immediate availability of production qualified iDrive Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN technology. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with...
by Navitas | Feb 7, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas 开始生产氮化镓(GaN)功率 IC Production qualification of 650V AllGaN™ Power ICs enables a high-speed revolution in power electronics. EL SEGUNDO, California USA – (PRWeb) – Navitas Semiconductor today...
by Navitas | Jan 31, 2017 | Latest News
[vc_row][vc_column][vc_column_text]A new report confirms Navitas AllGaN™ as the leading technology to challenge $15B power silicon market. For power electronics applications, wide bandgap (WBG)-based technologies (particularly silicon carbide (SiC) and gallium nitride...
by Navitas | Jan 2, 2017 | Latest News
Meet us at CES 2017 in Las Vegas (January 5th-6th) to learn more about the world’s first GaN Power ICs. Fast-forward to a next generation of power and contact [email protected].
by Navitas | Nov 2, 2016 | Latest News, Press Releases
Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power Electronics Society 4th IEEE Workshop on Wide Bandgap Power...
by Navitas | Sep 13, 2016 | Latest News
Front cover and technical article in IEEE’s Xplore journal “Monolithic HV GaN Power ICs: Performance and Application.” Article: IEEE Xplore September 2016 (requires IEEE log-in)
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