by Navitas | Jul 6, 2017 | In the Media
Navitas Semiconductor was formed in 2013 to enable a high-speed revolution in power electronics with the invention of the industry’s first GaN power ICs which deliver up to a 100x increase in switching speeds while increasing energy savings by 40% or more....
by Navitas | Jul 6, 2017 | In the Media
Gene Sheridan, CEO, Navitas Semiconductor, 7/3/2017 In my last blog, “Power Electronics. Up, Up & Away!”, I spoke about how resonant topologies and fast GaN power ICs enable high-frequency, high efficiency and high density power supply designs. However, there’s...
by Navitas | May 31, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text]150W AC-DC design delivers unprecedented 21 W/in3 and over 95% efficiency EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced the availability of a 150W AC-DC reference design utilizing the company’s industry-leading GaN...
by Navitas | May 3, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Executives Showcase Industry-First GaN Power ICs at PCIM Europe 2017 EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced it will showcase GaN Power IC advances at this year’s PCIM Europe in Nuremberg, Germany May 16th...
by Navitas | Mar 13, 2017 | In the Media
The debut article on the world’s first half-bridge GaN Power ICs explores the new world of high-frequency power conversion. Half-bridge circuits are essential building blocks in the power electronics industry, used in everything from smartphone chargers and...
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