by Navitas | May 31, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text]150W AC-DC design delivers unprecedented 21 W/in3 and over 95% efficiency EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced the availability of a 150W AC-DC reference design utilizing the company’s industry-leading GaN...
by Navitas | May 3, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Executives Showcase Industry-First GaN Power ICs at PCIM Europe 2017 EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced it will showcase GaN Power IC advances at this year’s PCIM Europe in Nuremberg, Germany May 16th...
by Navitas | Mar 13, 2017 | In the Media
The debut article on the world’s first half-bridge GaN Power ICs explores the new world of high-frequency power conversion. Half-bridge circuits are essential building blocks in the power electronics industry, used in everything from smartphone chargers and...
by Navitas | Mar 9, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] English Translation: Navitas Announces Significant GaN Power IC Coverage at APEC 2017 业界首创氮化镓 (GaN) 功率 IC 在高密度, 高效率转换器方面树立了新标准 EL SEGUNDO, Calif.–(PRWeb) Navitas (音译:纳微) 半导体公司今天宣布,公司将在 2017 年 3 月 26...
by Navitas | Mar 2, 2017 | In the Media
Navitas CEO, Gene Sheridan, shares his view on a major shift in power electronics after the industry’s 30-year plateau. The combination of resonant topologies, fast GaN transistors and GaN analog integration completes the needed trifecta for extraordinary...
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