by Navitas | Mar 9, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] English Translation: Navitas Announces Significant GaN Power IC Coverage at APEC 2017 业界首创氮化镓 (GaN) 功率 IC 在高密度, 高效率转换器方面树立了新标准 EL SEGUNDO, Calif.–(PRWeb) Navitas （音译:纳微） 半导体公司今天宣布，公司将在 2017 年 3 月 26...
by Navitas | Mar 2, 2017 | In the Media
Navitas CEO, Gene Sheridan, shares his view on a major shift in power electronics after the industry’s 30-year plateau. The combination of resonant topologies, fast GaN transistors and GaN analog integration completes the needed trifecta for extraordinary...
by Navitas | Feb 22, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] English Translation: Navitas Produces World’s First Integrated Half-Bridge GaN Power IC AllGaN™集成技术解决了电力电子30年来在高速高压方面的挑战 加利福尼亚州埃尔塞贡多EL SEGUNDO, Calif.–(PRWeb)—Navitas...
by Navitas | Feb 21, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas 推出业界首个集成半桥氮化镓 (GaN) 功率 IC Unprecedented AllGaN™ integration solves 30-year industry challenge in high-speed, high-voltage power electronics. EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor...
by Navitas | Feb 17, 2017 | In the Media
Integrated GaN Power IC building blocks enable fast-switching topologies with simple “digital-in, power-out” capability. In power conversion, fast switching combined with high efficiency enables small size, low weight, and lower system cost. To achieve this, we need...
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