by Navitas | Feb 22, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] English Translation: Navitas Produces World’s First Integrated Half-Bridge GaN Power IC AllGaN™集成技术解决了电力电子30年来在高速高压方面的挑战 加利福尼亚州埃尔塞贡多EL SEGUNDO, Calif.–(PRWeb)—Navitas...
by Navitas | Feb 21, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas 推出业界首个集成半桥氮化镓 (GaN) 功率 IC Unprecedented AllGaN™ integration solves 30-year industry challenge in high-speed, high-voltage power electronics. EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor...
by Navitas | Feb 17, 2017 | In the Media
Integrated GaN Power IC building blocks enable fast-switching topologies with simple “digital-in, power-out” capability. In power conversion, fast switching combined with high efficiency enables small size, low weight, and lower system cost. To achieve this, we need...
by Navitas | Feb 7, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas 开始生产氮化镓(GaN)功率 IC Production qualification of 650V AllGaN™ Power ICs enables a high-speed revolution in power electronics. EL SEGUNDO, California USA – (PRWeb) – Navitas Semiconductor today...
by Navitas | Jan 31, 2017 | Latest News
[vc_row][vc_column][vc_column_text]A new report confirms Navitas AllGaN™ as the leading technology to challenge $15B power silicon market. For power electronics applications, wide bandgap (WBG)-based technologies (particularly silicon carbide (SiC) and gallium nitride...
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