by Navitas | Oct 12, 2022 | Short post, Tech Features
GaNSense Half-bridge ICs integrated current sense (VCS) feature shows excellent real-time matching and tracking performance versus inductor current (IL) at 1 A peak current levels for 120 W in an asymmetrical half-bridge (AHB) application circuit during steady-state,...
by Navitas | Oct 12, 2022 | Data Center News, EV News, Front Page, In the Media, Latest News, Mobile News, Short post, Solar News
“GaN power device maker, Navitas, believes its latest half-bridge power IC will deliver the high powers and efficiencies that mobile phone chargers, electric vehicles, photovoltaics and data centres need”. “IN EARLY September this year, California-based GaN power...
by Navitas | Oct 7, 2022 | Front Page, IR, Latest News, Short post, Tech Features
GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single-package solution reduces component...
by Navitas | Oct 7, 2022 | Front Page, In the Media, Latest News, Short post, Tech Features
“The EE Times Green Engineering Summit was held September 13-15. The goal of this summit was an exchange of ideas by various companies on their approach towards a more sustainable, lower carbon footprint future from the generation and storage of renewable energy,...
by Navitas | Oct 6, 2022 | Short post, Tech Features
GaNSense Half-bridge ICs integration of lossless current sensing eliminates external current sensing resistors to increase system efficiency and reduce PCB footprint, eliminate RCS hot-spots. When comparing GaNSense technology versus existing external current sensing...
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