by Navitas | Sep 21, 2022 | Front Page, In the Media, IR, IR Financial, Latest News, Short post
Navitas Semiconductor the only pure-play, next-generation power semiconductor company and industry leader in GaN power ICs recently announced the industry’s first GaNSense™ half-bridge power ICs. Ralf Higgelke, Technical Editor at WEKA FACHMEDIEN interviewed...
by Navitas | Sep 20, 2022 | Front Page, IR, Latest News, Press Releases
Demos include a wide range of ultra-fast GaN chargers, a new family of GaN half-bridge ICs, and high-performance, rugged SiC MOSFETs El Segundo, CA – September 20th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor...
by Navitas | Sep 12, 2022 | Short post
GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single component solution reduces...
by Navitas | Sep 9, 2022 | Data Center News, EV News, Front Page, In the Media, Industrial Motor News, IR, Latest News, Mobile News, Short post, Solar News
Five years into the second revolution in power semiconductors, gallium-nitride-(GaN)-based mobile fast-chargers dominate flagship smartphone and laptop models, taking market share from legacy power silicon chips. This next-generation ‘wide band-gap’ technology is...
by Navitas | Sep 7, 2022 | Data Center PR, EV PR, Front Page, Industrial Motor PR, IR, Latest News, Mobile PR, Press Releases, Solar PR
El Segundo, CA – September 7th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in GaN power ICs, today announced the industry’s first GaNSense™ half-bridge power ICs. These...
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