by Navitas | Nov 11, 2020 | Awards, Front Page, In the Media, IR, Latest News, Press Releases
Gallium Nitride Triumphs at Prestigious ASPENCORE “Double Summits” World Electronics Achievements Awards DUBLIN, Ireland — (PRWeb) Navitas Semiconductor today announced it had been recognized for with the “Outstanding Innovative Company of the Year”...
by Navitas | Jul 16, 2020 | Awards, Front Page, IR, Latest News, Press Releases
EE Times ‘Silicon 100’ ranks Navitas, the GaNFast™ Power IC leader as a top technology start-up DUBLIN, IRELAND –(PRWeb)— Navitas Semiconductor announced today its selection to the prestigious 2020 Electronic Engineering Times ‘Silicon 100’ start-up ranking....
by Navitas | Jan 2, 2020 | Awards, Front Page, In the Media, IR, Press Releases
GaNFast Power IC Technology Beats 100+ Challengers EL SEGUNDO, California— (PRWeb) – Navitas Semiconductor announced today that it was awarded the Shanghai Zhangjiang 895 and Zhangjiang Science City · ICV Pioneer Alliance “Innovation Star” Award on...
by Navitas | Dec 5, 2019 | Awards
DULLES, VA, December 5, 2019 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2019 R&D 100 Award for development of SiC-Based Monolithic Transistor-Rectifier Switch. GeneSiC Semiconductor Inc, a key...
by Navitas | Jun 21, 2019 | Awards, In the Media, Latest News, Press Releases
Frost & Sullivan recognizes company for its unique vision and system-level approach to enabling next-generation GaN-based power electronics systems SANTA CLARA, Calif., June 20, 2019 /PRNewswire/ — Based on its recent analysis of the global gallium nitride...
by Navitas | Dec 28, 2018 | Awards, In the Media, Press Releases
EE Times ‘Silicon 60’ ranks Navitas, the GaNFast™ Power IC leader, as 2018 top startup EL SEGUNDO, Calif.–(PRWeb)— Navitas Semiconductor announced today its selection to the prestigious 2018 Electronic Engineering Times ‘Silicon 60’ startup ranking. Navitas...
Recent Comments