by Navitas | Jun 21, 2019 | Awards, In the Media, Latest News, Press Releases
Frost & Sullivan recognizes company for its unique vision and system-level approach to enabling next-generation GaN-based power electronics systems SANTA CLARA, Calif., June 20, 2019 /PRNewswire/ — Based on its recent analysis of the global gallium nitride...
by Navitas | Dec 28, 2018 | Awards, In the Media, Press Releases
EE Times ‘Silicon 60’ ranks Navitas, the GaNFast™ Power IC leader, as 2018 top startup EL SEGUNDO, Calif.–(PRWeb)— Navitas Semiconductor announced today its selection to the prestigious 2018 Electronic Engineering Times ‘Silicon 60’ startup ranking. Navitas...
by Navitas | May 17, 2018 | Awards, Latest News, Press Releases
Pioneering 40-year career spans first Silicon MOSFET transistor to next-generation GaNFast™ power ICs EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor announced today that Dan Kinzer, co-founder, CTO and COO will be inducted into the International Symposium on Power...
by Navitas | Jul 14, 2011 | Awards
DULLES, VA, July 14, 2011 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2011 R&D 100 Award for the commercialization of Silicon Carbide devices with high voltage ratings. GeneSiC Semiconductor Inc, a key...
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