by Navitas | Oct 31, 2022 | Front Page, IR, Latest News, Press Releases
Industry-leading GaN and SiC technologies for $22B market presented in keynote, industrial papers and exhibition booth Torrance, CA – October 31st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the pure-play, industry leader in next-generation power semiconductors...
by Navitas | Oct 26, 2022 | EV News, Front Page, In the Media, Latest News, Short post
“The opportunity for GaN in EV traction is enhanced as vehicles are moving to four, independent, ‘in-wheel’ traction motors to eliminate a single motor as a point of total failure. This eliminates mechanical drive-train components, delivers four-wheel drive for...
by Navitas | Oct 24, 2022 | Awards, Front Page, IR, Latest News, Press Releases
Founder of GeneSiC Semiconductor receives prestigious honor from NCSU, home of US SiC Research El Segundo, CA – October 24th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company, announced that Dr. Ranbir Singh,...
by Navitas | Oct 21, 2022 | Short post
GaNSense Half-bridge ICs integrated over current protection (OCP) provides cycle-by-cycle over-current detection and protection circuitry to protect the low-side GaN power FET against high current levels Find out more in our whitepaper and Application Note AN018:...
by Navitas | Oct 18, 2022 | Consumer PR, Front Page, IR, IR Financial, Latest News, Press Releases
Industry-leading, high-speed GaNFast™ and GeneSiC™ technologies drive a $22B/year market opportunity at the world’s leading electronics trade fair El Segundo, CA – October 18th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Oct 12, 2022 | Short post
GaNSense Half-bridge ICs integrated current sense (VCS) feature shows excellent real-time matching and tracking performance versus inductor current (IL) at 1 A peak current levels for 120 W in an asymmetrical half-bridge (AHB) application circuit during steady-state,...
by Navitas | Oct 12, 2022 | Data Center News, EV News, Front Page, In the Media, Latest News, Mobile News, Short post, Solar News
“GaN power device maker, Navitas, believes its latest half-bridge power IC will deliver the high powers and efficiencies that mobile phone chargers, electric vehicles, photovoltaics and data centres need”. “IN EARLY September this year, California-based GaN power...
by Navitas | Oct 7, 2022 | Front Page, IR, Latest News, Short post, Tech Feature
GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single-package solution reduces component...
by Navitas | Oct 7, 2022 | Front Page, In the Media, Latest News, Short post
“The EE Times Green Engineering Summit was held September 13-15. The goal of this summit was an exchange of ideas by various companies on their approach towards a more sustainable, lower carbon footprint future from the generation and storage of renewable energy,...
by Navitas | Oct 6, 2022 | Short post
GaNSense Half-bridge ICs integration of lossless current sensing eliminates external current sensing resistors to increase system efficiency and reduce PCB footprint, eliminate RCS hot-spots. When comparing GaNSense technology versus existing external current sensing...
Recent Comments