by Navitas | Oct 3, 2022 | Awards, Consumer PR, Front Page, IR, Latest News, Press Releases
“Electrify Our World™” mission recognized in ESG Investing’s ‘Best Sustainability’ and ‘Best Climate-Related’ categories El Segundo, CA – October 3rd, 2022— Navitas Semiconductor (Nasdaq: NVTS), the pure-play, industry leader in next-generation power...
by Navitas | Sep 29, 2022 | Front Page, IR, Latest News, Press Releases
Industry-leading, high-speed GaNFast™ and GeneSiC™ technologies deliver energy savings, faster charging, extended range, and lower system costs El Segundo, CA – September 29th, 2022— As US auto sales are forecasted to be majority EV by 2030, Navitas Semiconductor...
by Navitas | Sep 27, 2022 | Short post
The GaNSense half-bridge IC integrates a rich feature-set of sensing and protection all into a low inductance, thermally enhanced, industry standard PQFN 6×8 package: Loss-less current sensing Autonomous short circuit protection (<30 ns) Overtemperature...
by Navitas | Sep 21, 2022 | Front Page, In the Media, IR, IR Financial, Latest News, Short post
Navitas Semiconductor the only pure-play, next-generation power semiconductor company and industry leader in GaN power ICs recently announced the industry’s first GaNSense™ half-bridge power ICs. Ralf Higgelke, Technical Editor at WEKA FACHMEDIEN interviewed...
by Navitas | Sep 20, 2022 | Front Page, IR, Latest News, Press Releases
Demos include a wide range of ultra-fast GaN chargers, a new family of GaN half-bridge ICs, and high-performance, rugged SiC MOSFETs El Segundo, CA – September 20th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor...
by Navitas | Sep 12, 2022 | Short post
GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single component solution reduces...
by Navitas | Sep 9, 2022 | Data Center News, EV News, Front Page, In the Media, Industrial Motor News, IR, Latest News, Mobile News, Short post, Solar News
Five years into the second revolution in power semiconductors, gallium-nitride-(GaN)-based mobile fast-chargers dominate flagship smartphone and laptop models, taking market share from legacy power silicon chips. This next-generation ‘wide band-gap’ technology is...
by Navitas | Sep 7, 2022 | Data Center PR, EV PR, Front Page, Industrial Motor PR, IR, Latest News, Mobile PR, Press Releases, Solar PR
El Segundo, CA – September 7th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in GaN power ICs, today announced the industry’s first GaNSense™ half-bridge power ICs. These...
by Navitas | Aug 31, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
In-person meeting to review recent accretive GeneSiC Semi acquisition, with detailed device, system and market review, plus hands-on demonstrations of GaN and SiC power technology El Segundo, CA – August 31st, 2022: Navitas Semiconductor (Nasdaq: NVTS), the pure-play,...
by Navitas | Aug 29, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
New GeneSiC and VDD Tech acquisitions position Navitas to address a $20B+/year gallium nitride (GaN) and silicon carbide (SiC) opportunity, replacing legacy silicon chips. El Segundo, CA – August 29th, 2022: Navitas Semiconductor (Nasdaq: NVTS), the industry leader in...
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